MJD2955 transistor equivalent, silicon pnp power transistor.
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
*Designed for g.
*Excellent Safe Operating Area
*Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A
*Complement to Type MJD3055
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance
.
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